Rearrangement of electronic structure of Pb1-x-ySnxVyTe under pressure
نویسندگان
چکیده
منابع مشابه
Electronic Structure of Materials under Pressure
Parameter-free calculations based on the density-functional theory are used to examine high-pressure phases of solids. For the elemental semiconductors, as represented by Si, the high-pressure phases are examined in some detail, and particular attention is paid to the Si-VI orthorhombic (Cmca) structure which was resolved only very recently. For III-V semiconductors the optimization of the stru...
متن کاملElectronic structure and magnetic state of transuranium metals under pressure.
The electronic structures of bcc Np, fcc Pu, Am, and Cm pure metals under pressure have been investigated employing the LDA + U method with spin-orbit coupling (LDA + U + SO). The magnetic state of the actinide ions was analyzed in both LS and jj coupling schemes to reveal the applicability of corresponding coupling bases. It was demonstrated that whereas Pu and Am are well described within the...
متن کاملInelastic X-ray Scattering by Electronic Excitations under High Pressure
Investigating electronic structure and excitations under extreme conditions gives access to a rich variety of phenomena. High pressure typically induces behavior such as magnetic collapse and the insulator-metal transition in 3d transition metals compounds, valence fluctuations or Kondo-like characteristics in f -electron systems, and coordination and bonding changes in molecular solids and gla...
متن کاملdegradation of oil impregnated paper insulation under influence of repetitive fast high voltage impulses
در طی سالهای اخیراستفاده ازمنابع انرژی تجدید پذیر در شبکه های مدرن بنا به دلایل زیست محیطی و اقتصادی به طور گسترده استفاده شده است همچون نیروگاههای بادی و خورشیدی .ولتاژتولیدی این نیروگاهها اغلب به فرم dc می باشد وادوات الکترونیک قدرت به عنوان مبدل و پل بین شکل موج dc وac استفاده می شوند.این پروسه باعث ایجاد پالسهایی برروی شکل موج خروجی می شود که می تواند وارد تجهیزات قدرت همچون ترانسفورماتور ی...
15 صفحه اولinvestigation of the electronic properties of carbon and iii-v nanotubes
boron nitride semiconducting zigzag swcnt, $b_{cb}$$n_{cn}$$c_{1-cb-cn}$, as a potential candidate for making nanoelectronic devices was examined. in contrast to the previous dft calculations, wherein just one boron and nitrogen doping configuration have been considered, here for the average over all possible configurations, density of states (dos) was calculated in terms of boron and nitrogen ...
15 صفحه اولذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2012
ISSN: 1742-6596
DOI: 10.1088/1742-6596/377/1/012021